Nanoceria prepared by electron beam evaporation
نویسندگان
چکیده
منابع مشابه
Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor-liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can b...
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ژورنال
عنوان ژورنال: NANOCOM ...
سال: 2022
ISSN: ['2694-930X']
DOI: https://doi.org/10.37904/nanocon.2022.4585